The Crossbar company announced "achieving another key milestones required to bring to market microarray terabyte storage capacity." We are talking about the developments in the field of non-volatile resistive random access memory - RRAM, or ReRAM.
Theoretically RRAM circuits capable of providing approximately the same speed as the DRAM, while being non-volatile. Compared with flash-NAND memory of the new type is characterized by lower energy consumption and an order of magnitude higher number of write cycles.
Crossbar memory designs 3D RRAM, architecture which provides three-dimensional layout. At the same applies proprietary technology 1TnR (1 Transistor driving n Resistive memory cell), whereby one transistor can manage a large number of memory cells (more than 2000). This allows to achieve a very high density of information storage.
But the technique 1TnR there is a downside. Due to stray currents deteriorating performance and reliability of your data. The problem was solved by the use of a patented device superlinear selection threshold. This selector allows you to suppress the leakage current to less than 0.1 nA. The proposed solution has proved to be effective as part of a microchip RRAM capacity of 4 Mbps.
